Services
PVD Films
Hionix uses state-of-the-art coating technologies to deliver specific film capabilities and the best combination of performance, physical characteristics, and cost savings to meet our customer needs.
Hionix can deposit films on a wide variety of substrates, and sizes:
Substrates
| Size (mm) | Thickness | |||
|---|---|---|---|---|
|
Type |
Minimum |
Maximum |
Minimum |
Maximum |
|
Silicon |
25 |
450 |
100um |
3mm |
|
GaAs/ InP |
50 |
200 |
150um |
1mm |
|
Glass |
25x25 |
550x550 |
30um |
3mm |
|
Polymer |
25x25 |
550x550 |
30mm |
3mm |
|
PCB |
10x10 |
550x550 |
200um |
3mm |
|
Molded |
25x25 |
550x550 |
200um |
3mm |
- Hionix has resources for a monthly capacity of 10,000 wafers (volume depends on process type).
- Standard production lead-time is less than 10 days for a majority of film services. R&D project lead-times may be longer depending upon complexity.
200mm wafers and smaller
Below are some of our available films/targets. However, note that we are constantly procuring new targets and developing new films. Please contact us directly if your requested film is not listed.
|
Ag |
AlSiCu |
CoFe |
In |
NiCu |
Ru |
Sn |
TiN |
|
Al |
Au |
Cr |
Mo |
NiV |
RuO2 |
SnZn |
TiW |
|
AlCu |
AZO |
Cu |
Mn |
Nb |
Si |
SS |
TiO2 |
|
AlN |
Bi |
CuMn |
MnN |
NbO2 |
SiC |
Ta |
W |
|
Al2O3 |
BiTe |
Hf |
Ni |
Pd |
SiGe |
TaN |
Zn |
|
AlSi |
C |
HfO2 |
NiCr |
Pt |
SiO2 |
Ta2O5 |
Zr |
|
AlTAZr |
Co |
ITO |
NiFe |
Quartz |
Si3N4 |
Ti |
ZrO2 |
300mm wafers and larger
|
Ag |
C |
CuGa |
Nb |
Ru |
SiO2 |
TiN |
|
|
Al |
Ce |
CuMn |
Ni |
RuO2 |
Si3N4 |
TiO2 |
|
|
AlCu |
CoTaZr |
Ge |
NiFe |
Sc |
SS |
TiW |
|
|
AlN |
Co |
Hf |
NiSi |
Si |
Ta |
W |
|
|
AlSi |
CoFe |
HfO2 |
NiTi |
SiC |
TaN |
Y |
|
|
Al2O3 |
Cr |
Mn |
NiMo |
SiGe |
Ta2O5 |
Zn |
|
|
AZO |
Cu |
Mo |
NiV |
SiN |
Ti |
Zr |
|
Thermal Oxides & Annealing
Thermal Oxides & Annealing
Thermal Oxides & Annealing
Hionix offers in-house dry and wet oxidation services for 2″ – 18″ diameter wafers, including Thermal Oxide services.
Hionix has a library of recipes for thermal oxide processes and has implemented hardware modifications to deliver the highest quality Thermal Oxide films with extremely low contaminants and minimal particle counts.
Wet Oxidation :
- 2k A - 20 k Å with wafer within wafer non uniformity of ± 5% range and target thickness tolerance of ± 10%
Dry Oxidation :
- 500A - 3k Å with wafer within wafer uniformity of ± 10% range and target thickness tolerance of ± 10%.
Hionix also offers Thermal Oxide annealing services at atmosphere/in inert environment.
Silicon -Wafers
Hionix carries a large inventory of Silicon wafers from 2” to 18” diameters with varying specifications. Please inquire with your requested specs for pricing and availability.